Film Deposition
Precision PVD, CVD, ALD, and evaporation solutions with complimentary comprehensive characterization reports.
OVERVIEW
YURAY delivers professional thin-film deposition solutions for research, prototyping, and production applications. Our capabilities include Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), and E-beam and Thermal Evaporation. We support a wide range of conductive, dielectric, semiconductor, and functional materials across multiple wafer sizes and thickness requirements. YURAY not only provides professional deposition services, but also supplies a complimentary comprehensive characterization report, helping customers verify film quality, thickness, uniformity, composition, and key performance indicators. From material selection through final inspection, our team ensures reliable, repeatable, and application-oriented thin-film results.
SERVICES
YURAY provides integrated thin-film deposition solutions covering PVD, CVD, ALD and E-beam evaporation. From substrate cleaning and surface activation to functional-film growth, thickness control, morphology inspection and contamination analysis, YURAY supports wafer, glass and advanced packaging applications. Our process portfolio enables conformal coating, high-aspect-ratio feature coverage and reliable film performance for semiconductor, optoelectronic and advanced interconnect manufacturing.
Physical Vapor Deposition (PVD)
Magnetron sputtering deposition of high-purity metal and dielectric films with precise thickness control, excellent uniformity, and dense microstructures — ideal for interconnects, seed layers, and optical coatings.
| Parameter | Specification |
|---|---|
| Deposition Method | DC / RF / Pulsed DC Sputtering |
| Material Types | Al, Cu, Ti, Au, Cr, Ni, ITO, SiO₂, Si₃N₄ |
| Wafer Size | 4" – 12" diameter |
| Film Thickness Range | 10 nm – 5 μm |
| Uniformity | ≤ ±3% (within wafer) |
| Step Coverage | ≥ 50% @ 5:1 aspect ratio |
| Base Pressure | < 5 × 10⁻⁷ Torr |
Chemical Vapor Deposition (CVD)
Plasma-enhanced and low-pressure chemical vapor deposition for conformal dielectric and semiconductor films, delivering excellent step coverage and reliable performance for passivation, etch stop, and sacrificial layer applications.
| Parameter | Specification |
|---|---|
| Deposition Method | PECVD / LPCVD / APCVD |
| Film Types | SiO₂, Si₃N₄, SiON, Poly-Si, SiC |
| Wafer Size | 4" – 12" diameter |
| Film Thickness Range | 10 nm – 20 μm |
| Uniformity | ≤ 2 – 5% (within wafer) |
| Step Coverage | ≥ 80% @ 10:1 aspect ratio |
| Process Temperature | 200 – 900 °C |
Atomic Layer Deposition (ALD)
Atomic-level precision deposition with unmatched conformality over high-aspect-ratio structures — perfect for ultra-thin gate oxides, diffusion barriers, and 3D device coating.
| Parameter | Specification |
|---|---|
| Deposition Method | Thermal & Plasma-Enhanced ALD |
| Film Types | Al₂O₃, HfO₂, TiO₂, ZnO, TiN, TaN, WN |
| Wafer Size | 4" – 12" diameter |
| Film Thickness Range | 0.5 – 100 nm |
| Uniformity | ≤ ±1% (within wafer) |
| Step Coverage | ≥ 95% @ 100:1 aspect ratio |
| Process Temperature | 50 – 400 °C |
E-beam and Thermal Evaporation
Electron-beam physical vapor deposition for high-purity metal and dielectric coatings with excellent adhesion and smooth surfaces — optimized for lift-off, metallization, and optical coating applications.
| Parameter | Specification |
|---|---|
| Deposition Method | E-beam evaporation / thermal evaporation |
| Material Types | Al, Au, Ni, Cr, Ti, Pt, SiO₂, MgF₂ |
| Wafer Size | Up to 12" diameter |
| Film Thickness Range | 5 nm – 5 μm |
| Uniformity | ≤ ±5% (within wafer) |
| Base Pressure | < 1 × 10⁻⁷ Torr |
| Process Temperature | 25 – 350 °C |
CASE STUDY
At YURAY, we provide end-to-end full-chain services. Below is a detailed look at how we translate stringent customer Statement of Work (SOW) requirements into delivered, proven results.
a-Si:H Deposition
A-Si Deposition Solutions
SiO2 Deposition Solutions
METROLOGY & QUALITY ASSURANCE
Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs
Quantified SOW Requirements
YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.
Continuous Process Improvement
YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.
SOW-Aligned Characterization Reports
YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.
Third-Party Double Confirmation
YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.
APPLICATIONS
High-density interconnects for advanced chip packaging.
Vertical silicon interconnects for heterogeneous integration.
Glass-based vertical interconnects for advanced packaging.
Precision metal deposition for semiconductor interconnects.
Reliable wafer/glass bonding for 3D integration.
Thin-film deposition for advanced semiconductor manufacturing.
Need a Custom Wafer or Fabrication Process?
Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.