Silicon Wafer Substrate
High-performance silicon substrates engineered for advanced packaging, research, and semiconductor manufacturing, delivering precision, consistency, customization, and dependable material traceability worldwide.
OVERVIEW
YURAY TECH provides specialized silicon wafer substrate solutions for advanced semiconductor manufacturing, packaging facilities, and research institutions. Silicon wafers remain the essential foundation of semiconductor fabrication, representing more than 90% of the global substrate market. Our portfolio includes Thermal Oxide on Silicon, Nitride on Silicon, and Square Silicon Wafers designed to meet demanding requirements for insulation, passivation, diffusion masking, device processing, and customized applications. Supported by rigorous quality standards and a stable supply chain, YURAY TECH ensures reliable lot-to-lot consistency, low warp performance, controlled surface quality, flexible wafer sizes, and complete lifecycle material traceability for every delivery.
SERVICES
Thermal Oxide on Silicon
High-quality thermal SiO₂ layers grown via dry/wet oxidation, delivering precise thickness control and excellent uniformity for gate dielectrics, diffusion masks, and isolation layers.
| Parameter | Specification |
|---|---|
| Wafer Diameter | 4" – 12" |
| Crystal Growth Method | CZ / FZ |
| Doping Type | N-type or P-type |
| Resistivity | 0.001 – 100 Ω·cm |
| Crystal Orientation | <100> / <111> |
| Thickness | 200 – 1000 μm |
| Total Thickness Variation | < 0.5 μm |
| Bow | < 10 μm |
| Warp | < 15 μm |
| Surface Roughness | < 0.5 nm Ra |
| Oxide Thickness | 10 nm – 30 μm |
| Oxide Uniformity | ±1% (within wafer) |
| Dielectric Strength | > 10 MV/cm |
| Particle Count (>0.12μm) | < 50 / wafer |
Nitride on Silicon
High-quality PECVD and LPCVD silicon nitride (Si₃N₄) films with excellent step coverage and uniformity, ideal for passivation layers, etch hard masks, and dielectric isolation.
| Parameter | Specification |
|---|---|
| Wafer Diameter | 4" – 12" |
| Crystal Growth Method | CZ / FZ |
| Doping Type | N-type or P-type |
| Resistivity | 0.001 – 100 Ω·cm |
| Crystal Orientation | <100> / <111> |
| Thickness | 200 – 1000 μm |
| Total Thickness Variation | < 0.5 μm |
| Bow | < 10 μm |
| Warp | < 15 μm |
| Surface Roughness | < 0.5 nm Ra |
| Nitride Thickness | 20 nm – 2 μm |
| Nitride Uniformity | ±3% (within wafer) |
| Refractive Index | 2.0 – 2.1 |
| Stress Control | ±100 MPa |
Square Silicon Wafers
Straight-edge square and pseudo-square silicon wafers engineered for maximum dicing efficiency, optimized for MEMS, microfluidics, and custom device fabrication processes.
| Parameter | Specification |
|---|---|
| Wafer Size | 10×10 mm – 150×150 mm |
| Crystal Growth Method | CZ / FZ |
| Doping Type | N-type or P-type |
| Resistivity | 0.001 – 100 Ω·cm |
| Crystal Orientation | <100> / <110> / <111> |
| Thickness | 200 – 1000 μm |
| Total Thickness Variation | < 0.5 μm |
| Bow | < 10 μm |
| Warp | < 15 μm |
| Surface Roughness | < 0.5 nm Ra |
| Edge Quality | Laser cut / diced |
| Edge Chamfer | 0° – 45° bevel |
| Dimensional Tolerance | ±0.1 mm |
| Particle Count (>0.12μm) | < 80 / wafer |
CASE STUDY
At YURAY, we supply high-quality silicon wafers in various sizes, doping types, and specifications — supporting R&D, prototyping, and small-volume production across MEMS, advanced packaging, and microfluidic applications.
Square Silicon Wafer for MEMS
8-inch Prime Silicon Wafer Supply
METROLOGY & QUALITY ASSURANCE
Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs
Quantified SOW Requirements
YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.
Continuous Process Improvement
YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.
SOW-Aligned Characterization Reports
YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.
Third-Party Double Confirmation
YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.
APPLICATIONS
High-density interconnects for advanced chip packaging.
Vertical silicon interconnects for heterogeneous integration.
Glass-based vertical interconnects for advanced packaging.
Precision metal deposition for semiconductor interconnects.
Reliable wafer/glass bonding for 3D integration.
Thin-film deposition for advanced semiconductor manufacturing.
Need a Custom Wafer or Fabrication Process?
Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.