Transmission Electron Microscope (TEM)
TEM delivers atomic-scale imaging and cross-section analysis of thin films and microstructures for advanced materials research and process optimization.
Application Scenarios: Atomic imaging, cross-section analysis, thin-film characterization.
Classic Standard: ASTM E2809 / ISO 29301.
Charging Standard: 6,500 RMB per hour.
OVERVIEW
YURAY provides comprehensive transmission electron microscopy (TEM) services for atomic-scale structural and crystallographic analysis of semiconductor devices, thin films, and advanced packaging interfaces. From high-resolution lattice imaging and STEM-HAADF analysis to elemental mapping with EDS/EELS, our TEM platform delivers sub-0.2 nm resolution with excellent signal-to-noise. We support interface study, defect analysis, and thin-film metrology with FIB-prepared electron-transparent lamellae.
SERVICES
Our TEM platform enables atomic-resolution imaging and comprehensive structural analysis — supporting interface characterization, crystallographic study, and defect investigation across a wide range of materials and device structures.
High-Resolution Imaging & Lattice Analysis
Atomic-resolution TEM imaging for lattice structure, grain boundaries, and defect analysis — enabling precise characterization of crystal structure, dislocation, and stacking faults at the atomic scale.
| Parameter | Specification |
|---|---|
| Lattice Resolution | < 0.2 nm |
| Acceleration Voltage | 80 – 300 kV |
| Imaging Modes | HRTEM / Bright-field / Dark-field |
| Analysis Types | Lattice, dislocation, stacking fault |
| Lamella Thickness | < 100 nm |
| Sample Types | Si, films, interfaces, metals |
| Output | Atomic-resolution images |
STEM & Elemental Analysis
STEM-HAADF imaging combined with EDS/EELS elemental mapping for chemical and structural characterization — enabling precise identification of interface composition, diffusion, and ultra-thin layer structures.
| Parameter | Specification |
|---|---|
| Imaging Modes | STEM / HAADF / BF-STEM |
| Elemental Analysis | EDS + EELS |
| Mapping Resolution | ≤ 1 nm |
| Detection Limits | Down to < 1 at% |
| Line Scan | Atomic-column profiling |
| Target Structures | Interfaces, diffusion, thin layers |
| Output | Maps + spectra + profiles |
CASE STUDY
At YURAY, we provide end-to-end full-chain metrology services. Below is a detailed look at how we translate stringent customer Statement of Work (SOW) requirements into delivered, proven TEM characterization results.
Cu-Cu Hybrid Bonding Interface TEM Analysis
- HRTEM lattice imaging
- Sample Supply — Hybrid-bonded Cu-Cu wafer pair, incoming inspection and interface localization
- FIB lift-out at bonding interface
- Analysis — Interface inspection at atomic scale
- Analysis — EDS line-scan + EELS analysis
- Metrology — Atomic-scale thickness measurement
- Bonded pair supported
- Lamella thickness: < 80 nm
- Cu lattice clearly resolved
- Void-free Cu-Cu interface confirmed
- Cu/O distribution mapped
- Interlayer: ~2 nm measured
- Images, maps, and spectra consolidated
- Final characterization report delivered
Thin-Film & Gate Stack TEM Metrology
- HRTEM imaging of stack
- Sample Supply — Multi-layer thin-film wafer (SiO₂/SiN/metal), incoming inspection and sample preparation
- FIB in-situ lift-out
- Atomic-scale thickness measurement
- Analysis — Interface roughness and interdiffusion
- Analysis — STEM-EDS compositional mapping
- Multi-layer stack supported
- Target stack lamella fabricated
- All layers resolved
- SiO₂: 5.1 nm, SiN: 12.3 nm
- Sharp interfaces confirmed
- Layer composition confirmed
- Images, thickness data, and maps integrated
- Final characterization report delivered
METROLOGY & QUALITY ASSURANCE
Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs
Quantified SOW Requirements
YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.
Continuous Process Improvement
YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.
SOW-Aligned Characterization Reports
YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.
Third-Party Double Confirmation
YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.
APPLICATIONS
High-density interconnects for advanced chip packaging.
Vertical silicon interconnects for heterogeneous integration.
Glass-based vertical interconnects for advanced packaging.
Precision metal deposition for semiconductor interconnects.
Reliable wafer/glass bonding for 3D integration.
Thin-film deposition for advanced semiconductor manufacturing.
Need a Custom Wafer or Fabrication Process?
Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.